| Part Number | MJD32C |
| Manufacturer | Kexin |
| Title | Complementary Power Transistors |
| Description | SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in... |
| Features |
Lead Formed for Surface Mount Applications in Plastic Sleeves Pb-Free Packages are Available
+09.70 .2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+01.50 .15 -0.15
0.80+0.1 -0.1
0.127 max
+0.50 0.15 -0.15
+1.50 0.28 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
Absolute... |
| Datasheet | MJD32C pdf datasheet |
| Part Number | MJD32C |
| Manufacturer | ST Microelectronics |
| Title | Low voltage PNP power transistor |
| Description | The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance couple. |
| Features |
■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C Application ■ General purpose linear and switching equipment Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain per. |
| Datasheet | MJD32C pdf datasheet |
| Part Number | MJD32C |
| Manufacturer | nexperia |
| Title | 3A PNP high power bipolar transistor |
| Description | PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits. |
| Features |
and benefits
• High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regu. |
| Datasheet | MJD32C pdf datasheet |
| Part Number | MJD32C |
| Manufacturer | TAITRON |
| Title | SMD Power Transistor |
| Description | MJD32C Marking Code MJD32C VCEO Collector-Emitter Voltage 100 VCBO Collector-Base Voltage 100 VEBO Emitter-Base Voltage 5 IC Collecto. |
| Features |
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Sym. |
| Datasheet | MJD32C pdf datasheet |
| Part Number | MJD32C |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surfac. |
| Features |
nction to Ambient 80 ℃/W
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD32C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage . |
| Datasheet | MJD32C pdf datasheet |
| Part Number | MJD32C |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ，。 Low Speed ,Load Formed for Surface Mount Application. / . |
| Features |
，。 Low Speed ,Load Formed for Surface Mount Application.
/ Applications
。 General Purpose Amplifier.
/ Equivalent Circuit
/ Pinning
12 3
4
PIN1：Base
PIN 2,4：Collector
PIN 3：Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
http://www.fsbrec.com
1/6
MJD32C
Rev.E M. |
| Datasheet | MJD32C pdf datasheet |
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