| Part Number | BUW12W |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Silicon diffused power transistors |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators ... |
| Features |
8 20 125 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon ... |
| Datasheet | BUW12W pdf datasheet |
| Part Number | BUW12W |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switch. |
| Features |
ower Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cuto. |
| Datasheet | BUW12W pdf datasheet |
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