| Part Number | MJ1509 |
| Manufacturer | Innogration |
| Title | High Power RF LDMOS FET |
| Description | The MJ1509 is a 90-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.... |
| Features |
High Efficiency and Linear Gain Operations Integrated ESD Protectio... |
| Datasheet | MJ1509 pdf datasheet |
| Part Number | MJ1505 |
| Manufacturer | Innogration |
| Title | 28V High Power RF LDMOS FET |
| Description | The MJ1505 is a 50-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.. |
| Features |
. |
| Datasheet | MJ1505 pdf datasheet |
| Part Number | MJ15027 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High current capability ·High power dissipation ·Complement to the NPN MJ15026 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d. |
| Features |
A ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -100V; IE=0
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
hFE-1
DC Current Gain
IC=- 5A ; VCE=- 5V
hFE-2
DC Current Gain
IC=- 1A ; VCE=- 5V
MJ15027
MIN MAX UNIT
-200
V
-2
V
-. |
| Datasheet | MJ15027 pdf datasheet |
| Part Number | MJ15027 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·Complement to type MJ15026 ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear . |
| Features |
TICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC. |
| Datasheet | MJ15027 pdf datasheet |
| Part Number | MJ15026 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Com. |
| Features |
sc Silicon NPN Power Transistor
MJ15026
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Satura. |
| Datasheet | MJ15026 pdf datasheet |
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