These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
High efficient switched mode power supplies
TV Power
Adapter/charger
LED Lighting
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) Drain Current
– Continuous (TC=100℃) Drain Current
– Pulsed1 Single Pulse Avalanche.
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