Part Number | PFU2N65 |
Manufacturer | Wing On |
Title | N-Channel MOSFET |
Description | July 2008 PFU2N65 / PFD2N65 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitan... |
Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery charge... |
Datasheet | PFU2N65 pdf datasheet |
Part Number | PFU2N60 |
Manufacturer | Wing On |
Title | N-Channel MOSFET |
Description | Aug 2006 PFU2N60 / PFD2N60 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitanc. |
Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery charge. |
Datasheet | PFU2N60 pdf datasheet |
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