and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency. Electrical characteristics(.
• Plastic package with UL 94V-0 flammability classification
• Flame retardant epoxy molding component
• Guardring for overvoltage protection
• Low power loss, high efficiency
• RoHS compliant (2002/95/EC)
12 3
1
3
ITO-220AB
2
Description and applications
Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.
Electrical characteristics(1)
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