| Part Number | MJ11032 |
| Manufacturer | TAITRON |
| Title | Darlington Power Transistors |
| Description | Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector P... |
| Features |
Designed for use as output devices in complementary General purpose amplifier High Gain Darlington performance High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A Monolithic construction with built-in base-emitter shunt resistor RoHS Compliant TO-3 Mechanical Data Case... |
| Datasheet | MJ11032 pdf datasheet |
| Part Number | MJ11032 |
| Manufacturer | ON |
| Title | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Description | MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Po. |
| Features |
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to + 200_C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ. |
| Datasheet | MJ11032 pdf datasheet |
| Part Number | MJ11032 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO−3 type package designed for use as output devices in. |
| Features |
D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
| Datasheet | MJ11032 pdf datasheet |
| Part Number | MJ11032 |
| Manufacturer | DIGITRON |
| Title | Power Transistor |
| Description | MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMEN. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage . |
| Datasheet | MJ11032 pdf datasheet |
| Part Number | MJ11032 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement . |
| Features |
is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA
V CE(sa. |
| Datasheet | MJ11032 pdf datasheet |
| Part Number | MJ11032 |
| Manufacturer | Motorola |
| Title | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output d. |
| Features |
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Datasheet | MJ11032 pdf datasheet |
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