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MJ13332

INCHANGE
MJ13332
Part Number MJ13332
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance ...
Features L PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13332 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collec...

Datasheet MJ13332 pdf datasheet



MJ13335

INCHANGE
MJ13335
Part Number MJ13335
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance .
Features CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.5A IC= 10A; IB= 1.8A,TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB=.

Datasheet MJ13335 pdf datasheet




MJ13334

INCHANGE
MJ13334
Part Number MJ13334
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati.
Features d SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ,IB= 6.7A VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 2A ICEO Colle.

Datasheet MJ13334 pdf datasheet




MJ13333

INCHANGE
MJ13333
Part Number MJ13333
Manufacturer INCHANGE
Title NPN Transistor
Description · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loads ·Minimum Lot-to-Lot variations for robu.
Features ise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 6.7A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A .

Datasheet MJ13333 pdf datasheet




MJ13333

ON
MJ13333
Part Number MJ13333
Manufacturer ON
Title NPN SILICON POWER TRANSISTORS
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 t.
Features ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

Datasheet MJ13333 pdf datasheet




MJ13333

Motorola
MJ13333
Part Number MJ13333
Manufacturer Motorola
Title 20 AMPERE NPN SILICON POWER TRANSISTORS
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 t.
Features ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

Datasheet MJ13333 pdf datasheet





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