| Part Number | MJ16008 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
ISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.17
UNIT ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) C... |
| Datasheet | MJ16008 pdf datasheet |
| Part Number | MJ16006 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance. |
| Features |
YMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.17
UNIT ℃/W
MJ16006
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) C. |
| Datasheet | MJ16006 pdf datasheet |
| Part Number | MJ16004 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and. |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Em. |
| Datasheet | MJ16004 pdf datasheet |
| Part Number | MJ16002A |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power swi. |
| Features |
X 1.4 UNIT ℃/W
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sa. |
| Datasheet | MJ16002A pdf datasheet |
| Part Number | MJ16002 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and. |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A
VBE(sat) Base-Emi. |
| Datasheet | MJ16002 pdf datasheet |
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