| Part Number | MJD200 |
| Manufacturer | ON |
| Title | Complementary Plastic Power Transistors |
| Description | www..com MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designe... |
| Features |
http://onsemi.com
• Collector−Emitter Sustaining Voltage − • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc • • • • • • • = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector−Emitter Saturation Voltage − VCE(s... |
| Datasheet | MJD200 pdf datasheet |
| Part Number | MJD200 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain- : hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD210 ·. |
| Features |
sc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJD200
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
25
V
VCE(sat)-1. |
| Datasheet | MJD200 pdf datasheet |
| Part Number | MJD200 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface. |
| Features |
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ. |
| Datasheet | MJD200 pdf datasheet |
| Part Number | MJD200 |
| Manufacturer | Fairchild |
| Title | D-PAK |
| Description | MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Appl. |
| Features |
est Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Min. 25 Max. 100 100 Unit. |
| Datasheet | MJD200 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy