| Part Number | TK32E12N1 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: ... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK32E12N1
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absol... |
| Datasheet | TK32E12N1 pdf datasheet |
| Part Number | TK32E12N1 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK32E12N1，ITK32E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 1. |
| Features |
·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T. |
| Datasheet | TK32E12N1 pdf datasheet |
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