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These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Sw.
at Tc=100¥ Pulsed IRF710-711 3.6 1.5 1.0 6.0 Maximum On-State Characteristics R ӨJC Thermal Resistance 6.4 Junction to Case R ӨJA Thermal Resistance, 80 Junction to Ambient PD Total Power Dissipation 20 at Tc=25¥ Notes For information concerning connection diagram and package outline, refer to Section 7. Rating IRF711/713 MTP2N35 350 350 ±20 -55 to +150 275 IRF712-713 5.0 1.4 0.9 5.0 6.4 80 20 Unit V V V ¥ ¥ NTP2N35/40 Unit 5.0 Ω A 1.3 0.8 5.0 2.5 ¥/W 80 ¥/W 50 W www.artschip.com 1 IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V Electrica.
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