| Part Number | TK4P55D |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor TK4P55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.88Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VD... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 1.88Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ... |
| Datasheet | TK4P55D pdf datasheet |
| Part Number | TK4P55D |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS. |
| Features |
(1) Low drain-source on-resistance : RDS(ON) = 1.5 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.0 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P55D
DPAK
1: Ga. |
| Datasheet | TK4P55D pdf datasheet |
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