| Part Number | 2SK1825 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | N-Channel MOSFET |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Analog Switch Applications · 4 V gate drive ·... |
| Features |
ime
Turn-on time Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 10 V, VDS = 0
¾ ¾ 1 mA
V (BR) DSS ID = 100 mA, VGS = 0
50 ¾ ¾ V
IDSS
VDS = 50 V, VGS = 0
¾ ¾ 1 mA
Vth VDS = 5 V, ID = 0.1 mA
0.8 ¾ 2.5 V
ïYfsï
VDS = 5 V, ID = 10 mA
20 ¾ ¾ mS
RDS (ON) ID = 10 mA, VGS ... |
| Datasheet | 2SK1825 pdf datasheet |
| Part Number | 2SK1829 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate driv. |
| Features |
eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with. |
| Datasheet | 2SK1829 pdf datasheet |
| Part Number | 2SK1828 |
| Manufacturer | Kexin |
| Title | N-Channel MOSFET |
| Description | SMD Type N-Channel MOSFET 2SK1828 ■ Features ● VDS (V) = 20V ● ID = 50mA ● RDS(ON) ＜ 40Ω (VGS = 2.5V) ● Low threshold voltage: Vth = 0.5~1.5 V . |
| Features |
● VDS (V) = 20V ● ID = 50mA ● RDS(ON) ＜ 40Ω (VGS = 2.5V) ● Low threshold voltage: Vth = 0.5~1.5 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0. |
| Datasheet | 2SK1828 pdf datasheet |
| Part Number | 2SK1828 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive. |
| Features |
propriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please . |
| Datasheet | 2SK1828 pdf datasheet |
| Part Number | 2SK1827 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Analog Switch Applications · 4 V gate drive . |
| Features |
nce
Switching time
Turn-on time Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 10 V, VDS = 0
¾ ¾ 1 mA
V (BR) DSS ID = 100 mA, VGS = 0
50 ¾ ¾ V
IDSS
VDS = 50 V, VGS = 0
¾ ¾ 1 mA
Vth VDS = 5 V, ID = 0.1 mA
0.8 ¾ 2.5 V
ïYfsï
VDS = 5 V, ID = 10 mA
20 ¾ ¾ mS
RDS (ON) . |
| Datasheet | 2SK1827 pdf datasheet |
| Part Number | 2SK1826 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive . |
| Features |
capacitance
Switching time
Turn-on time Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 10 V, VDS = 0
¾ ¾ 1 mA
V (BR) DSS ID = 100 mA, VGS = 0
50 ¾ ¾ V
IDSS
VDS = 50 V, VGS = 0
¾ ¾ 1 mA
Vth VDS = 5 V, ID = 0.1 mA
0.8 ¾ 2.5 V
ïYfsï
VDS = 5 V, ID = 10 mA
20 ¾ ¾ mS
R. |
| Datasheet | 2SK1826 pdf datasheet |
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