| Part Number | 2SK1841 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Enhancement Silicon MOSFET |
| Description | Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs.... |
| Features |
· Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra... |
| Datasheet | 2SK1841 pdf datasheet |
| Part Number | 2SK1849 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Silicon MOSFET |
| Description | Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed s. |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur. |
| Datasheet | 2SK1849 pdf datasheet |
| Part Number | 2SK1848 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Silicon MOSFET |
| Description | Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed s. |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage . |
| Datasheet | 2SK1848 pdf datasheet |
| Part Number | 2SK1847 |
| Manufacturer | Sanyo Semicon Device |
| Title | N-Channel Silicon MOSFET |
| Description | Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed s. |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1847] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur. |
| Datasheet | 2SK1847 pdf datasheet |
| Part Number | 2SK1846 |
| Manufacturer | Panasonic |
| Title | Silicon N-Channel Power F-MOS FET |
| Description | Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed . |
| Features |
q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Rat. |
| Datasheet | 2SK1846 pdf datasheet |
| Part Number | 2SK1842 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon N-Channel Junction FET |
| Description | Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.. |
| Features |
q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 Gate to Drain voltage Gate to Source voltage. |
| Datasheet | 2SK1842 pdf datasheet |
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