| Part Number | 2SK1860 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | Silicon Junction FETs (Small Signal) 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capa... |
| Features |
• High mutual conductance gm • Low noise voltage of NV 1 +0.10 0.40 –0.05 0.12 –0.01 +0.02 3 1.5±0.2 2.1±0.1 5.8±0.2 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse op... |
| Datasheet | 2SK1860 pdf datasheet |
| Part Number | 2SK1869S |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1869(L), 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switchin. |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc. |
| Datasheet | 2SK1869S pdf datasheet |
| Part Number | 2SK1869L |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1869(L), 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switchin. |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc. |
| Datasheet | 2SK1869L pdf datasheet |
| Part Number | 2SK1869 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1869(L), 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switchin. |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1869(L), 2SK1869(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc. |
| Datasheet | 2SK1869 pdf datasheet |
| Part Number | 2SK1867 |
| Manufacturer | Panasonic |
| Title | Silicon N-Channel Power F-MOS FET |
| Description | Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuese. |
| Features |
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown
q Allowing to supply by the radial taping
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Swi. |
| Datasheet | 2SK1867 pdf datasheet |
| Part Number | 2SK1863 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1862, 2SK1863 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low . |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1862, 2SK1863 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1862 2SK1863 Gate to source. |
| Datasheet | 2SK1863 pdf datasheet |
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