| Part Number | 2SK2489 |
| Manufacturer | Shindengen Electric Mfg.Co.Ltd |
| Title | VZ Series Power MOSFET |
| Description | SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type 2SK2489 ( F10S18VZ ) 180V 10A FEATURES •œ Input capacitance (Ciss) is small. Especia... |
| Features |
•œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) •œ DC/DC converters •œ Power supplies of DC 12-24V input •œ Product related to Integrate... |
| Datasheet | 2SK2489 pdf datasheet |
| Part Number | 2SK2488 |
| Manufacturer | NEC |
| Title | N-Channel MOSFET |
| Description | The 2SK2488 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURE. |
| Features |
RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A)
1.0
• Low On-Resistance • Low Ciss Ciss = 2 900 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) T. |
| Datasheet | 2SK2488 pdf datasheet |
| Part Number | 2SK2487 |
| Manufacturer | NEC |
| Title | N-Channel MOSFET |
| Description | The 2SK2487 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX.. |
| Features |
• Low On-Resistance RDS (on) = 1.6 Ω (VGS = 10 V, ID = 4.0 A) 1.0 15.7 MAX. 4 3.2±0.2 • Low Ciss Ciss = 2 100 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Di. |
| Datasheet | 2SK2487 pdf datasheet |
| Part Number | 2SK2486 |
| Manufacturer | NEC |
| Title | N-Channel MOSFET |
| Description | The 2SK2486 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX.. |
| Features |
• Low On-Resistance RDS (on) = 2.0 Ω (VGS = 10 V, ID = 4.0 A) 1.0 15.7 MAX. 4 3.2±0.2 • Low Ciss Ciss = 1 830 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Di. |
| Datasheet | 2SK2486 pdf datasheet |
| Part Number | 2SK2485 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2485 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive. |
| Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER . |
| Datasheet | 2SK2485 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy