| Part Number | 2SD2259 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.... |
| Features |
q q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.2
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector pow... |
| Datasheet | 2SD2259 pdf datasheet |
| Part Number | 2SD2258 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Transistor 2SD2258 (Tentative) Silicon NPN epitaxial planer type 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0. |
| Features |
0.65 max.
1.0 1.0
0.2
Unit µA µA V V V
VCE(sat) VBE(sat) fT
V V MHz
Rank classification
Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
Pulse measurement
Rank hFE
1
Transistor
PC — Ta
Collector to emitter saturation voltage VCE(sat) (V)
1.2
2SD2258
VCE(sat) — IC
10 IC/IB=1000
VBE(sat) — I. |
| Datasheet | 2SD2258 pdf datasheet |
| Part Number | 2SD2257 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Typ. |
| Features |
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 1.5mA
ICBO
Collector Cutoff Current
VCB= 100V. |
| Datasheet | 2SD2257 pdf datasheet |
| Part Number | 2SD2257 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching app. |
| Features |
or-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=10mA ;IB=0 IC=1.5A ;IB=1.5mA IC=1.5A ;IB=1.5mA VCB=100V ;IE=0 VEB=8V; IC=0 IC=1A ; VCE=2V IC=2A ; VCE=2V IE=1A 0.8 2000 . |
| Datasheet | 2SD2257 pdf datasheet |
| Part Number | 2SD2257 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2257 Unit. |
| Features |
ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimat. |
| Datasheet | 2SD2257 pdf datasheet |
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