| Part Number | 2SD2385 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 ·Minimum Lo... |
| Features |
Voltage IC= 50mA ; IB= 0
140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA
2.5
V
VBE(on) Base-Emitter On Voltage
IC= 7A ; VCE= 5V
3.0
V
ICBO
Collector Cutoff Current
VCB= 140V ; IE=0
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
μA
hFE-1
DC Current Gain
IC=... |
| Datasheet | 2SD2385 pdf datasheet |
| Part Number | 2SD2385 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN Transistor |
| Description | 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High . |
| Features |
140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 7 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 140
5000
2000 ― ― ― ―
Note: hFE (1) classifi. |
| Datasheet | 2SD2385 pdf datasheet |
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