XP8081 Datasheet

XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)

Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For analog switching (Tr1)/switching (Tr2) 0.65 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and.

Features

1 2 3 6 5 4 0.9±0.1 q 2SK1103+UN1213 (transistors with built-in resistor) 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings
  –50 20 10 50 50 100 150 150
  –55 to +150 Unit V mA mA V V mA mW ˚C ˚C 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC
  –88 S
  –Mini .