Part Number | TIP137 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | Silicon Power Transistors |
Description | TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switch... |
Features |
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc • Monolit... |
Datasheet | TIP137 pdf datasheet |
Part Number | TIP137 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturatio. |
Features |
,Junction to Case
1.785 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(. |
Datasheet | TIP137 pdf datasheet |
Part Number | TIP137 |
Manufacturer | TRANSYS |
Title | PLASTIC POWER TRANSISTORS |
Description | SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current. |
Features |
ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V
MIN
MAX 0.5 0.2 5.0
UNIT mA mA mA V V V V V V
60 80 100 2.0 3.0 2.5 500 1,000 15,000
Collector Emi. |
Datasheet | TIP137 pdf datasheet |
Part Number | TIP137 |
Manufacturer | Multicomp |
Title | Darlington Transistors |
Description | TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Mi. |
Features |
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter . |
Datasheet | TIP137 pdf datasheet |
Part Number | TIP137 |
Manufacturer | SavantIC |
Title | Silicon PNP Darlington Power Transistors |
Description | ·With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP130/131/132 APPLICATIONS ·Designed for general-purpose amp. |
Features |
. |
Datasheet | TIP137 pdf datasheet |
Part Number | TIP137 |
Manufacturer | STMicroelectronics |
Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
Description | The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is. |
Features |
For PNP types voltage and current values are negative.
October 1999
1/4
TIP132 / TIP135 / TIP137
THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise spe. |
Datasheet | TIP137 pdf datasheet |
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