Part Number | TIP3055 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Compl... |
Features |
icon NPN Power Transistors
TIP3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation ... |
Datasheet | TIP3055 pdf datasheet |
Part Number | TIP3055 |
Manufacturer | STMicroelectronics |
Title | Complementary power transistors |
Description | The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. 3 2 1 TO-24. |
Features |
■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. 3 2 1 TO-247 Figure 1. . |
Datasheet | TIP3055 pdf datasheet |
Part Number | TIP3055 |
Manufacturer | ON Semiconductor |
Title | Complementary Silicon Power Transistors |
Description | TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. Features . |
Features |
• DC Current Gain − hFE = 20 − 70 @ IC = 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emit. |
Datasheet | TIP3055 pdf datasheet |
Part Number | TIP3055 |
Manufacturer | Motorola |
Title | POWER TRANSISTORS |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D Complementary Silicon Power Transistors TIP3055 PNP TIP2955 15 AMPERE P. |
Features |
r –Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area MAXIMUM RATINGS Rating Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage 100 7.. |
Datasheet | TIP3055 pdf datasheet |
Part Number | TIP3055 |
Manufacturer | Comset Semiconductors |
Title | (TIP2955 / TIP3055) Silicon Power Transistors |
Description | SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended f. |
Features |
ings
Test Condition(s)
IC= 30 mA, IB=0 IB =0, VCE = 30 V VCE= 70 V, RBE= 100 Ω VCE= 70 V, VBE= 1.5 V VEB= 7 V, IC=0 IC= 4 A, IB= 400 mA IC= 10 A, IB= 3.3 A IC= 4 A, VCE = 4 V IC= 4 A, VCE = 4 V IC= 10 A, VCE = 4 V VCE= 30 V, t= 1.0 s Non repetitive
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60 20 5 3 2.5
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Datasheet | TIP3055 pdf datasheet |
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