logo
Search by part number and manufacturer or description

SML40B37 Datasheet

Download Datasheet
SML40B37 File Size : 21.13KB

SML40B37 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML40B37 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.0.

Features

GS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
  – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 400 37 148 ±20 ±30 370 2.96
  –55 to 150 300 37 30 1300 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25.

SML40B37 SML40B37 SML40B37

Similar Product

No. Part # Manufacture Description Datasheet
1 SML40B27
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet
2 SML40B28
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet
3 SML40A26
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet
4 SML40H22
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet
5 SML40H28
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet
More datasheet from Seme LAB
Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)