RFL1N12 Datasheet

RFL1N12 1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

Features

• 1A, 120V and 150V
• rDS(ON) = 1.9Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFL1N12 RFL1N15 PACKAGE TO-205AF TO-205AF BRAND G S RFL1N12 RFL1N15 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handli.