| Part Number | MJ2500 |
| Manufacturer | Central Semiconductor (https://www.centralsemi.com/) |
| Title | Silicon complementary trasistors |
| Description | ... |
| Features |
... |
| Datasheet | MJ2500 pdf datasheet |
| Part Number | MJ2500 |
| Manufacturer | Motorola |
| Title | 10 AMPERE DARLINGTON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Sil. |
| Features |
ion with Built –in Base –Emitter Shunt Resistors MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB MJ2500 MJ3000 60 60 MJ2501 MJ3001 80 80 Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current Base Current 5.0 10 0.2 Total Device Dissipation @ . |
| Datasheet | MJ2500 pdf datasheet |
| Part Number | MJ2500 |
| Manufacturer | SavantIC |
| Title | (MJ2500 / MJ2501) SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices i. |
| Features |
; IB=-50mA IC=-5A ; VCE=-3V MJ2500 ICER Collector cut-off current MJ2501 MJ2500 ICEO Collector cut-off current MJ2501 IEBO hFE Emitter cut-off current DC current gain VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-3V VCE=-60V; RBE=1.0k? TC=150 VCE=-80V; RBE=1.0k? TC=150 VCE=-30V; IB=0 CONDITIONS
www.dat. |
| Datasheet | MJ2500 pdf datasheet |
| Part Number | MJ2500 |
| Manufacturer | DIGITRON |
| Title | PNP Transistor |
| Description | MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWE. |
| Features |
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage C. |
| Datasheet | MJ2500 pdf datasheet |
| Part Number | MJ2500 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min. |
| Features |
rlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage . |
| Datasheet | MJ2500 pdf datasheet |
| Part Number | MJ2500 |
| Manufacturer | Comset Semiconductors |
| Title | (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS |
| Description | PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darling. |
| Features |
w.DataSheet4U.net/
PNP MJ2500 – MJ2501 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.0 V IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE. |
| Datasheet | MJ2500 pdf datasheet |
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