| Part Number | MJ2501 |
| Manufacturer | SavantIC |
| Title | (MJ2500 / MJ2501) SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices i... |
| Features |
; IB=-50mA IC=-5A ; VCE=-3V MJ2500 ICER Collector cut-off current MJ2501 MJ2500 ICEO Collector cut-off current MJ2501 IEBO hFE Emitter cut-off current DC current gain VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-3V VCE=-60V; RBE=1.0k? TC=150 VCE=-80V; RBE=1.0k? TC=150 VCE=-30V; IB=0 CONDITIONS
www.dat... |
| Datasheet | MJ2501 pdf datasheet |
| Part Number | MJ2501 |
| Manufacturer | ST Microelectronics |
| Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | te cThe MJ2501 is a Silicon Epitaxial-Base PNP le upower transistors in monolithic Darlington dconfiguration, mounted in Jedec TO-3 metal so rocas. |
| Features |
. |
| Datasheet | MJ2501 pdf datasheet |
| Part Number | MJ2501 |
| Manufacturer | Central Semiconductor |
| Title | Silicon complementary trasistors |
| Description | . |
| Features |
. |
| Datasheet | MJ2501 pdf datasheet |
| Part Number | MJ2501 |
| Manufacturer | DIGITRON |
| Title | PNP Transistor |
| Description | MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWE. |
| Features |
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage C. |
| Datasheet | MJ2501 pdf datasheet |
| Part Number | MJ2501 |
| Manufacturer | Multicomp |
| Title | Medium-power complementary Silicon Transistors |
| Description | MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpo. |
| Features |
• Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors. Pin 1. Base 2. Emitter Collector(Case) D. |
| Datasheet | MJ2501 pdf datasheet |
| Part Number | MJ2501 |
| Manufacturer | Comset Semiconductors |
| Title | (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS |
| Description | PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darling. |
| Features |
w.DataSheet4U.net/
PNP MJ2500 – MJ2501 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.0 V IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE. |
| Datasheet | MJ2501 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy