| Part Number | MJD210 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface... |
| Features |
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ... |
| Datasheet | MJD210 pdf datasheet |
| Part Number | MJD210 |
| Manufacturer | UTC |
| Title | PNP Transistor |
| Description | The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 TO-251 FEATURE * Collector-Emitter Sustainin. |
| Features |
* Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA
* High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @ IC=-5A
* Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
* Straight Lead Version in Plastic Sleeves (“-1” Suffix) * Lead . |
| Datasheet | MJD210 pdf datasheet |
| Part Number | MJD210 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN . |
| Features |
Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJD210
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-25
V
VCE(sat)-1 . |
| Datasheet | MJD210 pdf datasheet |
| Part Number | MJD210 |
| Manufacturer | Fairchild |
| Title | PNP Transistor |
| Description | MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface . |
| Features |
BO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A IC = - 5A, IB = - 1A VCE = - 1V, IC = - 2A VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = 0.1MHz 65 120 70 45 10 Min. -25 Max. -100 -100 18. |
| Datasheet | MJD210 pdf datasheet |
| Part Number | MJD210 |
| Manufacturer | ON |
| Title | Complementary Plastic Power Transistors |
| Description | www..com MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designe. |
| Features |
http://onsemi.com
• Collector−Emitter Sustaining Voltage − • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc • • • • • • • = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector−Emitter Saturation Voltage − VCE(s. |
| Datasheet | MJD210 pdf datasheet |
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