| Part Number | MJD2955 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surf... |
| Features |
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A... |
| Datasheet | MJD2955 pdf datasheet |
| Part Number | MJD2955 |
| Manufacturer | JCST |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) FEATURES y Designed for G. |
| Features |
y Designed for General Purpose Amplifier and Low Speed
Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Volta. |
| Datasheet | MJD2955 pdf datasheet |
| Part Number | MJD2955 |
| Manufacturer | TAITRON |
| Title | SMD Power Transistor |
| Description | MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector C. |
| Features |
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Sym. |
| Datasheet | MJD2955 pdf datasheet |
| Part Number | MJD2955 |
| Manufacturer | ST Microelectronics |
| Title | Complementary Silicon Power Transistors |
| Description | The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3. |
| Features |
nce Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
6.25 100
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX ICBO
Collector Cut-off
VCE = 70 V
Current (VBE = -1.5 V) VCE = 70 V
Collector Cut-off Curr. |
| Datasheet | MJD2955 pdf datasheet |
| Part Number | MJD2955 |
| Manufacturer | GME |
| Title | Epitaxial Planar NPN Transistor |
| Description | Production specification Epitaxial Planar PNP Transistor FEATURES Lead formed for surface mount Pb applications. Lead-free Straight lea. |
| Features |
Lead formed for surface mount Pb applications. Lead-free Straight lead. Electrically similar to popular MJE2955T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING oper. |
| Datasheet | MJD2955 pdf datasheet |
| Part Number | MJD2955 |
| Manufacturer | ON |
| Title | Complementary Power Transistors |
| Description | www..com MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed f. |
| Features |
• Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC = 500 mA. |
| Datasheet | MJD2955 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy