| Part Number | MJD350 |
| Manufacturer | DIODES (https://www.diodes.com/) |
| Title | HIGH VOLTAGE PNP TRANSISTOR |
| Description | NEW PRODUCT MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • High Collector-EmitterVoltage • Idea... |
| Features |
• Epitaxial Planar Die Construction • High Collector-EmitterVoltage • Ideally Suited for Automated Assembly Processes • Ideal for Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: DPAK • Case Material: Molde... |
| Datasheet | MJD350 pdf datasheet |
| Part Number | MJD350 |
| Manufacturer | Kexin |
| Title | PNP Epitaxial Silicon Transistor |
| Description | SMD Type Transistors PNP Epitaxial Silicon Transistor MJD350 Features Load Formed for Surface Mount Application Straight Lead +9.70 0.2 -0.2 . |
| Features |
Load Formed for Surface Mount Application Straight Lead
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
+ 0 .1 55 .5 5 -0.15
0.80+0.1 -0.1
0.127 max
3.80
+02.65 .25 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
2.3 4.60+0.15
-0.15
0.60+. |
| Datasheet | MJD350 pdf datasheet |
| Part Number | MJD350 |
| Manufacturer | TAITRON |
| Title | SMD Transistor |
| Description | MJD350 Marking Code MJD350 VCBO Collector-Base Voltage 300 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Base Voltage 3 IC Collecto. |
| Features |
• Designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T . |
| Datasheet | MJD350 pdf datasheet |
| Part Number | MJD350 |
| Manufacturer | ST Microelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a r. |
| Features |
. |
| Datasheet | MJD350 pdf datasheet |
| Part Number | MJD350 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for . |
| Features |
h j-a Thermal Resistance,Junction to Ambient 80 ℃/W
MJD350
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Vo. |
| Datasheet | MJD350 pdf datasheet |
| Part Number | MJD350 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features 。 High voltage. / Applications 。 High voltage general purp. |
| Features |
。 High voltage.
/ Applications
。 High voltage general purpose applications.
/ Equivalent Circuit
/ Pinning
12 3
4
PIN1：Base
PIN 2,4：Collector
PIN 3：Emitter
/ hFE Classifications & Marking
。See Marking Instructions.
http://www.fsbrec.com
1/6
MJD350
Rev.E May.-2016
/ Absolute Max. |
| Datasheet | MJD350 pdf datasheet |
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