| Part Number | MJD44H11 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Complementary power transistors |
| Description | These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching app... |
| Features |
■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low voltage multi epitaxial planar technology. They are... |
| Datasheet | MJD44H11 pdf datasheet |
| Part Number | MJD44H11 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Power Transistors |
| Description | MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose power and switch. |
| Features |
• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy M. |
| Datasheet | MJD44H11 pdf datasheet |
| Part Number | MJD44H11 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mou. |
| Features |
e,Junction to Ambient 71.4 ℃/W
MJD44H11
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
MJD44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sust. |
| Datasheet | MJD44H11 pdf datasheet |
| Part Number | MJD44H11 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 . |
| Features |
Transistor Device Data
0.118 3.0
0.07 1.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ. |
| Datasheet | MJD44H11 pdf datasheet |
| Part Number | MJD44H11 |
| Manufacturer | nexperia |
| Title | 8A NPN high power bipolar transistor |
| Description | NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefi. |
| Features |
and benefits
• High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD44H series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage reg. |
| Datasheet | MJD44H11 pdf datasheet |
| Part Number | MJD44H11 |
| Manufacturer | Fairchild |
| Title | NPN Epitaxial Silicon Transistor |
| Description | MJD44H11 — NPN Epitaxial Silicon Transistor April 2015 MJD44H11 NPN Epitaxial Silicon Transistor Features • General-Purpose Power and Switching. |
| Features |
• General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 2.Collector 3.Emitter Ordering Info. |
| Datasheet | MJD44H11 pdf datasheet |
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