| Part Number | MJH16004 |
| Manufacturer | Mospec |
| Title | POWER TRANSISTORS |
| Description | A A A A ... |
| Features |
... |
| Datasheet | MJH16004 pdf datasheet |
| Part Number | MJH16008 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance. |
| Features |
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=3mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
. |
| Datasheet | MJH16008 pdf datasheet |
| Part Number | MJH16006A |
| Manufacturer | ON |
| Title | POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH16006A/D Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These . |
| Features |
• • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Collector –Emitter Voltage — VCEV = 1000 Vdc • Fast Turn –Off Times 80 ns Inductive Fall Time — 100_C (Typ) 120 ns Inductive Crossover Time — 100_C (Typ) 800 ns Inductive Storage Time — 100_C (Typ). |
| Datasheet | MJH16006A pdf datasheet |
| Part Number | MJH16006A |
| Manufacturer | Motorola |
| Title | POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH16006A/D Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These . |
| Features |
• • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Collector –Emitter Voltage — VCEV = 1000 Vdc • Fast Turn –Off Times 80 ns Inductive Fall Time — 100_C (Typ) 120 ns Inductive Crossover Time — 100_C (Typ) 800 ns Inductive Storage Time — 100_C (Typ). |
| Datasheet | MJH16006A pdf datasheet |
| Part Number | MJH16006 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance. |
| Features |
.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4. |
| Datasheet | MJH16006 pdf datasheet |
| Part Number | MJH16006 |
| Manufacturer | ON |
| Title | POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH16006A/D Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These . |
| Features |
• • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Collector –Emitter Voltage — VCEV = 1000 Vdc • Fast Turn –Off Times 80 ns Inductive Fall Time — 100_C (Typ) 120 ns Inductive Crossover Time — 100_C (Typ) 800 ns Inductive Storage Time — 100_C (Typ). |
| Datasheet | MJH16006 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy