| Part Number | MMBT3640 |
| Manufacturer | Fairchild |
| Title | PNP Switching Transistor |
| Description | This device is designed for very high-speed saturated switching at collector currents to 100 mA. Sourced from process 65. Ordering Information Pa... |
| Features |
... |
| Datasheet | MMBT3640 pdf datasheet |
| Part Number | MMBT3646 |
| Manufacturer | Fairchild |
| Title | Switching Transistor |
| Description | MMBT3646 MMBT3646 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted S. |
| Features |
= 65°C) DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc) (IC = 100mAdc, VCE = 0.5Vdc) (IC = 300mAdc, VCE = 1Vdc) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) (IC = 30mA, IB = 3mA, TA =65°C) Base-Emitter Saturation Voltage (IC = 30m. |
| Datasheet | MMBT3646 pdf datasheet |
| Part Number | MMBT3640LT1 |
| Manufacturer | Leshan Radio Company |
| Title | Switching Transistor(PNP Silicon) |
| Description | . |
| Features |
. |
| Datasheet | MMBT3640LT1 pdf datasheet |
| Part Number | MMBT3640LT1 |
| Manufacturer | Motorola |
| Title | Switching Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3640LT1/D Switching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3640LT1 Mo. |
| Features |
or – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –. |
| Datasheet | MMBT3640LT1 pdf datasheet |
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