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MMBT3904LT1

Tuofeng Semiconductor
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Tuofeng Semiconductor
Title NPN Transistor
Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2...
Features SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL C...

Datasheet MMBT3904LT1 pdf datasheet



MMBT3904LT1

Silicon Standard
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Silicon Standard
Title NPN Transistor
Description FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage j.
Features „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERIST.

Datasheet MMBT3904LT1 pdf datasheet




MMBT3904LT1

ON
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer ON
Title General Purpose Transistor
Description MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −.
Features
• Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS.

Datasheet MMBT3904LT1 pdf datasheet




MMBT3904LT1

Motorola
MMBT3904LT1
Part Number MMBT3904LT1
Manufacturer Motorola
Title General Purpose Transistor
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3904LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE MMBT3904L.
Features or
  – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR
  – 5 = 1.0 0.75 0..

Datasheet MMBT3904LT1 pdf datasheet





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