| Part Number | MMBT3906 |
| Manufacturer | DIODES (https://www.diodes.com/) |
| Title | 40V PNP SMALL SIGNAL TRANSISTOR |
| Description | Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lea... |
| Features |
• Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capa... |
| Datasheet | MMBT3906 pdf datasheet |
| Part Number | MMBT3906 |
| Manufacturer | SEMTECH |
| Title | PNP Silicon General Purpose Transistor |
| Description | MMBT3906 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is r. |
| Features |
. |
| Datasheet | MMBT3906 pdf datasheet |
| Part Number | MMBT3906 |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL PNP TRANSISTOR |
| Description | ® MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT3906 s Marking 36 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE S. |
| Features |
ol I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V
V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (. |
| Datasheet | MMBT3906 pdf datasheet |
| Part Number | MMBT3906 |
| Manufacturer | HOTTECH |
| Title | SWITCHING TRANSISTOR |
| Description | HABT3906(PNP) REPLACEMENT TYPE :MMBT3906 SWITCHING TRANSISTOR FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier . |
| Features |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Complement to HABT3904(NPN) MAXIMU MRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -6 C. |
| Datasheet | MMBT3906 pdf datasheet |
| Part Number | MMBT3906 |
| Manufacturer | Rectron |
| Title | Silicon PNP SMD triode |
| Description | only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actua. |
| Features |
) VCE=-1V IC=-50mA
HFE(3) VCE=-1V IC=-100mA
IC=-10mA IB=-1mA Collector-Emitter Saturation Voltage VCE(sat)
IC=-50mA IB=-5mA
Collector-Base Saturation Voltage
IC=-10mA IB=-1mA VBE(sat)
IC=-50mA IB=-5mA
transition frequency
fT
VCE=-20V IC=-10mA f=100MHz
Min -40 -40 -6
100 60 30
250
Max
-100 -. |
| Datasheet | MMBT3906 pdf datasheet |
| Part Number | MMBT3906 |
| Manufacturer | ON Semiconductor |
| Title | PNP General-Purpose Amplifier |
| Description | This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 EBC TO-92 MM. |
| Features |
. |
| Datasheet | MMBT3906 pdf datasheet |
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