| Part Number | MMBT5088 |
| Manufacturer | GME |
| Title | Silicon Epitaxial Planar Transistor |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free M... |
| Features |
z Excellent HFE Linearity. z Power dissipation.(PC=0.2W).
Pb
Lead-free
MMBT5088/5089
APPLICATIONS
z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA.
ORDERING INFORMATION
Type No.
Marking
MMBT5088 MMBT5089
1Q 1R
SO... |
| Datasheet | MMBT5088 pdf datasheet |
| Part Number | MMBT5088 |
| Manufacturer | Kexin |
| Title | NPN General Purpose Amplifier |
| Description | SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0. |
| Features |
NPN general purpose amplifier
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collect. |
| Datasheet | MMBT5088 pdf datasheet |
| Part Number | MMBT5088 |
| Manufacturer | WEITRON |
| Title | Low Noise NPN Transistor |
| Description | Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as . |
| Features |
. |
| Datasheet | MMBT5088 pdf datasheet |
| Part Number | MMBT5088 |
| Manufacturer | Samsung |
| Title | NPN (LOW NOISE TRANSISTOR) |
| Description | . |
| Features |
. |
| Datasheet | MMBT5088 pdf datasheet |
| Part Number | MMBT5088 |
| Manufacturer | UTC |
| Title | (MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER |
| Description | The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 3 1 2 SOT-23 (J. |
| Features |
Derating Factor above TA= 25°C
PD
350 mW 2.8 mW/°C
Junction Temperature
TJ 125 °C
Operating Temperature
TOPR
-40 ~ +150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ra. |
| Datasheet | MMBT5088 pdf datasheet |
| Part Number | MMBT5088 |
| Manufacturer | Fairchild |
| Title | NPN General Purpose Amplifier |
| Description | 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q /. |
| Features |
operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
2N5088 2N5089 625 5.0 83.3 200
Max
*MMBT5088 *MMBT5089 350 2.8 357
Units
PD RθJC RθJA
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Am. |
| Datasheet | MMBT5088 pdf datasheet |
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