Part Number | MMBT5088LT1 |
Manufacturer | Motorola |
Title | Low Noise Transistors |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5088LT1/D Low Noise Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5088LT1 M... |
Features |
mbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 V... |
Datasheet | MMBT5088LT1 pdf datasheet |
Part Number | MMBT5088LT1 |
Manufacturer | ON |
Title | Low Noise Transistors |
Description | ON Semiconductort Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1 MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Collect. |
Features |
r –Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR –5 = 1.0 0.75 0.062 in. 2. Alu. |
Datasheet | MMBT5088LT1 pdf datasheet |
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