| Part Number | MPSW14 |
| Manufacturer | Motorola |
| Title | One Watt Darlington Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW13/D One Watt Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 MPSW13 MP... |
| Features |
(VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 — — — 100 100 Vdc nAdc nAdc
REV 1
Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSW13 MPSW14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Contin... |
| Datasheet | MPSW14 pdf datasheet |
| Part Number | MPSW13 |
| Manufacturer | ON Semiconductor |
| Title | NPN Transistor |
| Description | MPSW13 One Watt Darlington Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 • Pb−Free Package is Available* MAXIMUM RATINGS R. |
| Features |
http://onsemi.com
COLLECTOR 3 BASE 2
• Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate abov. |
| Datasheet | MPSW13 pdf datasheet |
| Part Number | MPSW13 |
| Manufacturer | Motorola |
| Title | One Watt Darlington Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW13/D One Watt Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 MPSW13 MP. |
| Features |
(VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 — — — 100 100 Vdc nAdc nAdc
REV 1
Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSW13 MPSW14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Contin. |
| Datasheet | MPSW13 pdf datasheet |
| Part Number | MPSW10 |
| Manufacturer | Motorola |
| Title | One Watt High Voltage Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW10/D One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER. |
| Features |
oltage (IC = 100 µAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 — — — — — 0.2 0.1 Vdc Vdc Vdc µAdc µAdc v. |
| Datasheet | MPSW10 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy