| Part Number | BSS229 |
| Manufacturer | Siemens Semiconductor Group |
| Title | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
| Description | SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Availa... |
| Features |
unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Dr... |
| Datasheet | BSS229 pdf datasheet |
| Part Number | BSS229 |
| Manufacturer | Siemens Semiconductor |
| Title | SIPMOS Small-Signal Transistor |
| Description | SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Availa. |
| Features |
unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Dr. |
| Datasheet | BSS229 pdf datasheet |
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