Part Number | MC74HC1G04 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | Single Inverter |
Description | Single Inverter MC74HC1G04 The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is comp... |
Features |
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • High Noise Immunity • Balanced Propagation Delays (tpLH = tpHL) • Symmetrical Output Impedance (IOH = IOL = 2 mA) • Chip Complexity: < 100 FETs • NLV Prefix for Automotive and Other Applications Requ... |
Datasheet | MC74HC1G04 pdf datasheet |
Part Number | MC74HC1G08 |
Manufacturer | ON Semiconductor |
Title | Single 2-Input AND Gate |
Description | Single 2-Input AND Gate MC74HC1G08 The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal. |
Features |
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • High Noise Immunity • Balanced Propagation Delays (tpLH = tpHL) • Symmetrical Output Impedance (IOH = IOL = 2 mA) • Chip Complexity: < 100 FETs • NLV Prefix for Automotive and Other Applications Requ. |
Datasheet | MC74HC1G08 pdf datasheet |
Part Number | MC74HC1G02 |
Manufacturer | ON Semiconductor |
Title | Single 2-Input NOR Gate |
Description | DATA SHEET www.onsemi.com Single 2-Input NOR Gate MC74HC1G02 The MC74HC1G02 is a high speed CMOS 2−input NOR gate fabricated with silicon gate CM. |
Features |
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • High Noise Immunity • Balanced Propagation Delays (tpLH = tpHL) • Symmetrical Output Impedance (IOH = IOL = 2 mA) • Chip Complexity: < 100 FETs • −Q Suffix for Automotive and Other Applications Requi. |
Datasheet | MC74HC1G02 pdf datasheet |
Part Number | MC74HC1G00 |
Manufacturer | ON Semiconductor |
Title | Single 2-Input NAND Gate |
Description | Single 2-Input NAND Gate MC74HC1G00 The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The intern. |
Features |
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • High Noise Immunity • Balanced Propagation Delays (tpLH = tpHL) • Symmetrical Output Impedance (IOH = IOL = 2 mA) • Chip Complexity: < 100 FETs • −Q Suffix for Automotive and Other Applications Requi. |
Datasheet | MC74HC1G00 pdf datasheet |
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