IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the br.
• 8.4A, 100V
• rDS(ON) = 0.270Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFR120 IRFU120 PACKAGE TO-252AA TO-251AA BRAND IRFR120 IRFU120
Symbol
D
G
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE GATE
JEDEC TO-252AA
DRAIN (FLANGE)
DRAIN DRAIN (FLANGE)
SOURCE
4-377
CAUTION: These devices are sensi.
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