The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The .
• Part Identification - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder) - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold)
• Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDPin & pinout
PERFORMANCE RANGE
Speed -50 -60
tRAC
50ns 60ns
tCAC
15ns 15ns
tRC
90ns 110ns
tHPC
25ns 30ns
• PCB : Height(750mil), double sided component
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | M53230224CE2 |
Samsung Semiconductor |
(M53230224CE2/CJ2) DRAM Module | |
2 | M53230224DE2 |
Samsung Semiconductor |
(M53230224DE2/DJ2) DRAM Module | |
3 | M53230224DJ2 |
Samsung Semiconductor |
(M53230224DE2/DJ2) DRAM Module | |
4 | M53230400CB0 |
Samsung Semiconductor |
(M532304x0CB0/CW0) DRAM Module | |
5 | M53230400CW0 |
Samsung Semiconductor |
(M532304x0CB0/CW0) DRAM Module |