| Part Number | MBM29DL161TE |
| Manufacturer | Fujitsu Media Devices |
| Title | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation |
| Description | The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE a... |
| Features |
Dual Operation
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read ... |
| Datasheet | MBM29DL161TE pdf datasheet |
| Part Number | MBM29DL161TE-90 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL161TE-90 pdf datasheet |
| Part Number | MBM29DL161TE-70 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL161TE-70 pdf datasheet |
| Part Number | MBM29DL161TE-12 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL161TE-12 pdf datasheet |
| Part Number | MBM29DL161TD-90 |
| Manufacturer | Fujitsu |
| Title | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
| Description | Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write . |
| Features |
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously re. |
| Datasheet | MBM29DL161TD-90 pdf datasheet |
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