MJD6039

Part Number	MJD6039
Manufacturer	Motorola
Title	SILICON POWER TRANSISTORS
Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD6036/D Complementary Darlington Power Transistors DPAK For Surface Mount Applic...
Features	ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ...
Datasheet	MJD6039 pdf datasheet

Part Number	MJD6039
Manufacturer	ON Semiconductor
Title	Darlington Power Transistors
Description	MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as.
Features	 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  Straight Lead Version in Plastic Sleeves (“−1” Suffix)  Monolithic Construction With Built−in Base−Emitter Shunt Resistors  High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc  Epoxy Meets UL 94 V−0 @ 0.125 in  ESD .
Datasheet	MJD6039 pdf datasheet

Part Number	MJD6039
Manufacturer	Inchange Semiconductor
Title	Silicon NPN Power Transistor
Description	·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for rob.
Features	stered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A ;IB= 8mA VBE(on) Base-Em.
Datasheet	MJD6039 pdf datasheet