| Part Number | MMBF170LT1 |
| Manufacturer | Motorola |
| Title | TMOS FET Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE... |
| Features |
dc
ON CHARACTERISTICS (2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain –Source On –Resistance (VGS = 10 Vdc, ID = 200 mA) On –State Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 — — 3.0 5.0 0.5 Vdc W mA pF DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, V... |
| Datasheet | MMBF170LT1 pdf datasheet |
| Part Number | MMBF170LT1 |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain. |
| Features |
• Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc 1 Unit http://o. |
| Datasheet | MMBF170LT1 pdf datasheet |
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