MSC82001 Datasheet

MSC82001 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82001 w.

Features

00 35 200 − 65 to +200 W mA V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82001 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA 45 3.5 45 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1 MHz PIN = 0.2 W PIN = 0.2 W PIN =.