| Part Number | MBM29DL162BD |
| Manufacturer | Fujitsu Media Devices |
| Title | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| Description | Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op... |
| Features |
Dual Operation
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simu... |
| Datasheet | MBM29DL162BD pdf datasheet |
| Part Number | MBM29DL162BE-90 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL162BE-90 pdf datasheet |
| Part Number | MBM29DL162BE-70 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL162BE-70 pdf datasheet |
| Part Number | MBM29DL162BE-12 |
| Manufacturer | Fujitsu |
| Title | 16M (2M x 8/1M x 16) BIT Dual Operation |
| Description | www..com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -7. |
| Features |
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write op. |
| Datasheet | MBM29DL162BE-12 pdf datasheet |
| Part Number | MBM29DL162BD-90 |
| Manufacturer | Fujitsu |
| Title | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
| Description | Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write . |
| Features |
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously re. |
| Datasheet | MBM29DL162BD-90 pdf datasheet |
| Part Number | MBM29DL162BD-70 |
| Manufacturer | Fujitsu |
| Title | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
| Description | Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write . |
| Features |
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously re. |
| Datasheet | MBM29DL162BD-70 pdf datasheet |
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