| Part Number | IXFR26N50 |
| Manufacturer | IXYS Corporation |
| Title | (IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhance... |
| Features |
W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rate... |
| Datasheet | IXFR26N50 pdf datasheet |
| Part Number | IXFR26N50Q |
| Manufacturer | IXYS Corporation |
| Title | (IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs |
| Description | HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr,. |
| Features |
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic . |
| Datasheet | IXFR26N50Q pdf datasheet |
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