| Part Number | C5294 |
| Manufacturer | Panasonic Semiconductor |
| Title | 2SC5294 |
| Description | Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High ... |
| Features |
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
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5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
... |
| Datasheet | C5294 pdf datasheet |
| Part Number | C5299 |
| Manufacturer | Sanyo Semiconductor Corporation |
| Title | 2SC5299 |
| Description | Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applic. |
| Features |
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C. |
| Datasheet | C5299 pdf datasheet |
| Part Number | C5298 |
| Manufacturer | Sanyo Semicon Device |
| Title | 2SC5298 |
| Description | Ordering number : EN5292 www..com NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal . |
| Features |
• High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Vo. |
| Datasheet | C5298 pdf datasheet |
| Part Number | C5297 |
| Manufacturer | Sanyo Semicon Device |
| Title | 2SC5297 |
| Description | w w w . D a t a S h e e t . c o . k r Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh. |
| Features |
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximu. |
| Datasheet | C5297 pdf datasheet |
| Part Number | C5296 |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT displa. |
| Features |
=5A;IB=1.25 A
Base-emitter saturation voltage
IC=5A;IB=1.25 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO ICBO ICES hFE-1
Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain
VEB=4V IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5. |
| Datasheet | C5296 pdf datasheet |
| Part Number | C5296 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Triple Diffused Planar Silicon Transistor |
| Description | w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahig. |
| Features |
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specif. |
| Datasheet | C5296 pdf datasheet |
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