| Part Number | TIP131 |
| Manufacturer | Power Innovations Limited |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | TIP130, TIP131, TIP132 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed f... |
| Features |
10 seconds NOTES: 1. 2. 3. 4. TIP131 TIP132 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 12 0.3 70 2 75 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temp... |
| Datasheet | TIP131 pdf datasheet |
| Part Number | TIP131 |
| Manufacturer | ON Semiconductor |
| Title | Silicon Power Transistors |
| Description | TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switch. |
| Features |
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc • Monolit. |
| Datasheet | TIP131 pdf datasheet |
| Part Number | TIP131 |
| Manufacturer | ST Microelectronics |
| Title | (TIP130 - TIP137) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 pla. |
| Features |
IP137 100 100 V V V A A A W W
o o
Unit
C C
* For PNP types voltage and current values are negative.
October 1995
1/4
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
THERMAL DATA
R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5
o o
C/W C. |
| Datasheet | TIP131 pdf datasheet |
| Part Number | TIP131 |
| Manufacturer | Multicomp |
| Title | Darlington Transistors |
| Description | TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Mi. |
| Features |
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter . |
| Datasheet | TIP131 pdf datasheet |
| Part Number | TIP131 |
| Manufacturer | SavantIC |
| Title | Silicon NPN Darlington Power Transistors |
| Description | ·With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP135/136/137 APPLICATIONS ·Designed for general-purpose amp. |
| Features |
. |
| Datasheet | TIP131 pdf datasheet |
| Part Number | TIP131 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation V. |
| Features |
Case
1.785 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collect. |
| Datasheet | TIP131 pdf datasheet |
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