IXFA14N60P Datasheet

IXFA14N60P Polar MOSFETs

ADVANCE TECHNICAL INFORMATION TM www.DataSheet4U.com PolarHV HiPerFET Power MOSFET IXFA 14N60P IXFP 14N60P IXFH 14N60P VDSS ID25 RDS(on) = 600 V = 14 A ≤ 550 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062.

Features

z 1.13/10 Nm/lb.in. 6 4 2 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.5 5.5 ±100 5 50 450 550 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All ri.